T431616C-6SG 查看數據表（PDF） - Taiwan Memory Technology

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T431616C-6SG

512K x 16bit x 2Banks Synchronous DRAM

Taiwan Memory Technology 

tm TE

CH

SDRAM

FEATURES

• 3.3V power supply

• Clock cycle time : 6 / 7 ns

• Dual banks operation

• LVTTL compatible with multiplexed address

• All inputs are sampled at the positive going

edge of system clock

• Burst Read Single-bit Write operation

• DQM for masking

• Auto refresh and self refresh

• 32ms refresh period (2K cycle)

• MRS cycle with address key programs

- CAS Latency ( 2 & 3 )

- Burst Length ( 1 , 2 , 4 , 8 & full page)

- Burst Type (Sequential & Interleave)

• Available package type :

- 50 pin TSOP(II)/lead-free

• Operating temperature :

- 0 ~ +70 °C

T431616C

1M x 16 SDRAM

512K x 16bit x 2Banks Synchronous DRAM

GRNERAL DESCRIPTION

The T431616C is 16,777,216 bits synchronous

high data rate Dynamic RAM organized as

2 x 524,288 words by 16 bits , fabricated with high

performance CMOS technology . Synchronous

design allows precise cycle control with the use of

system clock I/O transactions are possible on every

clock cycle . Range of operating frequencies ,

programmable burst length and programmable

latencies allow the same device to be useful for a

variety of high bandwidth , high performance

memory system applications.

ORDERING INFORMATION

PART NO.

T431616C-6S

T431616C-6SG

T431616C-7S

T431616C-7SG

CLOCK

CYCLE TIME

6ns

MAX

FREQUENCY

166 MHz

6ns

166 MHz

7ns

143 MHz

7ns

143 MHz

PACKAGE

TSOP-II

TSOP-II

Lead-free

TSOP-II

TSOP-II

Lead-free

OPERATING

TEMPERATURE

0 ~ +70 °C

0 ~ +70 °C

0 ~ +70 °C

0 ~ +70 °C

TM Technology Inc. reserves the right

P. 1

to change products or specifications without notice.

Publication Date: AUG. 2004

Revision: A

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