T431616D-5SC 查看數據表（PDF） - Taiwan Memory Technology

零件编号

产品描述 (功能)

生产厂家

T431616D-5SC

1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM

Taiwan Memory Technology 

tm TE

CH

T431616D/E

Figure 24.3. Precharge Termination of a Burst

(Burst Length=4, 8 or Full Page, CAS# Latency=3)

T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22

CLK

tCK3

CKE High

CS#

RAS#

CAS#

WE#

A11

RAx

RAy

A10

A0~A9 RAx

CAx

RAy

CAy

tWR

tRP

DQM

RAz

RAz

tRP

DQ

DAx0 DAx1

Activate

Command

Bank A

Write

Command

Bank A

Write Data

is masked

Precharge

Command

Bank A

Activate

Command

Bank A

Precharge Termination

of a Write Burst

Read

Command

Bank A

Ay0 Ay1 Ay2

Precharge

Command

Bank A

Activate Precharge Termination

Command of a Read Burst

Bank A

TM Technology Inc. reserves the right

P. 72

to change products or specifications without notice.

Publication Date: FEB. 2007

Revision: A

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