TC9402EJD 查看數據表（PDF） - TelCom Semiconductor Inc => Microchip

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TC9402EJD

VOLTAGE-TO-FREQUENCY/FREQUENCY-TO-VOLTAGE CONVERTERS

TelCom Semiconductor Inc => Microchip 

TC9400

TC9401

TC9402

VOLTAGE-TO-FREQUENCY/

FREQUENCY-TO-VOLTAGE CONVERTERS

ABSOLUTE MAXIMUM RATINGS*

VDD – VSS ................................................................. +18V

IIN ...........................................................................10mA

VOUT Max –VOUT Common .......................................... 23V

VREF – VSS ..............................................................– 1.5V

Storage Temperature Range ................ – 65°C to +150°C

Operating Temperature Range

C Device ................................................ 0°C to +70°C

E Device ........................................... – 40°C to +85°C

Package Dissipation (TA ≤ 70°C)

8-Pin CerDIP .................................................. 800mW

8-Pin Plastic DIP ............................................. 730mW

8-Pin SOIC .....................................................470mW

Lead Temperature (Soldering, 10 sec) ................. +300°C

*Static-sensitive device. Unused devices must be stored in conductive

material. Protect devices from static discharge and static fields. Stresses

above those listed under Absolute Maximum Ratings may cause perma-

nent damage to the device. These are stress ratings only and functional

operation of the device at these or any other conditions above those

indicated in the operational sections of the specifications is not implied.

Exposure to Absolute Maximum Rating Conditions for extended periods

may affect device reliability.

ELECTRICAL CHARACTERISTICS: VDD = +5V, VSS = – 5V, VGND = 0V, VREF = – 5V, RBIAS = 100kΩ,

Full Scale = 10kHz, unless otherwise specified. TA = +25°C, unless temperature range is specified (– 40°C to +85°C

for E device, 0°C to +70°C for C device).

VOLTAGE-TO-FREQUENCY

Parameter

Definition

TC9401

TC9400

TC9402

Min Typ Max Min Typ Max Min Typ Max Unit

Accuracy

Linearity 10 kHz

Linearity 100 kHz

Gain Temperature

Drift (Note 1)

Gain Variance

Output Deviation From Straight

Line Between Normalized Zero

and Full-Scale Input

Output Deviation From Straight

Line Between Normalized Zero

Reading and Full-Scale Input

Variation in Gain A Due to

Temperature Change

Variation From Ideal Accuracy

Zero Offset (Note 2)

Zero Temperature

Drift (Note 1)

Analog Input

IIN Full Scale

IIN Overrange

Response Time

Digital Section

VSAT @ IOL = 10mA

VOUT Max – VOUT

Common (Note 4)

Pulse Frequency

Output Width

Correction at Zero Adjust for Zero

Output When Input is Zero

Variation in Zero Offset Due to

Temperature Change

Full-Scale Analog Input Current to

Achieve Specified Accuracy

Overrange Current

Settling Time to 0.1% Full Scale

Logic "0" Output Voltage (Note 3)

Voltage Range Between Output

and Common

— 0.004 0.01 — 0.01 0.05 — 0.05 0.25 % Full

Scale

— 0.04 0.08 — 0.1 0.25 — 0.25 0.5 % Full

Scale

— ± 25 ± 40 — ± 25 ± 40 — ± 50 ± 100 ppm/°C

Full Scale

— ± 10 – — ± 10 — — ± 10 –

% of

Nominal

— ± 10 ± 50 — ± 10 ± 50 — ± 20 ± 100 mV

— ± 25 ± 50 — ± 25 ± 50 — ± 50 ± 100 µV/°C

— 10 — — 10 —

10 —

µA

— — 50 — — 50 — — 50

µA

— 2 — — 2 — — 2 — Cycle

— 0.2 0.4 — 0.2 0.4 — 0.2 0.4

— — 18 — — 18 — — 18

— 3 —— 3 — —3 —

V

V

µsec

3-288

TELCOM SEMICONDUCTOR, INC.

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