; TG35F GateCharacteristics
2
101
Peak Gate Voltage(10V)
5
2
100
5
−25℃
25℃
125℃
Average
GDiastteributioPPnoweae(kr G10aWte)
Gate Powe(r 1W)
2
Maximum Gate Voltage that will not trigger any unit
10−1
101 2
5 102 2
5 103 2
5
Gate Curren(t mA)
On State Current vs.
Maximum Power Dissipation
On-State Voltage
103
5
2
102
5
2
101
5
01234567
On-State Voltage(V)
On State Current vs.
Allowable Case Temperature
8
50
130
40
30
2
360。
: Conduction Angle
θ=180゜
θ=150゜
θ=120゜
θ=90゜
θ=60゜
θ=30゜
120
110
100
90
20
10
80
70
60
2
360。
: Conduction Angle
θ=30゜
θ=60゜
θ=90゜
θ=120゜
θ=150゜
θ=180゜
0
0
5 10 15 20 25 30 35 40
RMS On-State Curren(t A)
50
0
5 10 15 20 25 30 35 40
RMS On-State Curren(t A)
Ambient temp. vs. RMS On-State Current
35
Conduction Angle 180℃
30
Apply following figures for
different conduction angles
25
20
F-40 Rth 2 95
Self convection
F-60 Rth:1.53
15
Self convection
F-40 3m/s
Rth:1.28
10
F-60 3m/s
Rth:0.65
5
θ:150゜:1.02
θ:120゜:1.11
θ: 90゜:1.26
θ: 60゜:1.38
θ: 30゜:1.75
0
(Rth:heat Sink Thermal Impedance)
0
20 40 60 80 100 120 140
Maximum Allowable Ambient Temperature(℃)
Surge On-State Current Rating
(Non-Repetitive)
350
300
Tj=25℃ start
250
200
150
100
60Hz
50Hz
50
0
100
2
5
101
2
Time(cycles)
5
102
Transient Thermal Impedance
7
7
6
6
5
Self convection
F-40
5
4
4
Self convection
F-60
3
3
F-40 3m/s
2
F-60 3m/s
2
1
Junction to case 1
0
0
10ー3
10ー2
10ー1
100
101
102
103
104
Time t(sec)
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