TGA9092-SCC 查看數據表（PDF） - TriQuint Semiconductor
零件编号
产品描述 (功能)
生产厂家
TGA9092-SCC Datasheet PDF : 10 Pages
| |||
Product Data Sheet
January 10, 2005
TGA9092-SCC
TABLE II
DC PROBE TEST
(TA = 25 °C ± 5 °C)
Symbol
Imax(Q1)
Gm (Q1)
VP
BVGS
BVGD
Parameter
Maximum Current
Transconductance
Pinch-off Voltage
Breakdown Voltage Gate-
Source
Breakdown Voltage Gate-
Drain
Minimum Maximum Unit
400
800
mA
200
600
mS
-1.5
-0.5
V
-30
-13
V
-30
-13
V
TABLE III
AUTOPROBE FET PARAMETER MEASUREMENT CONDITONS
FET Parameters
( ) IDSS − IDS 1
Gm : Transconductance;
VG 1
VP : Pinch-Off Voltage; VGS for IDS = 0.5 mA/mm of
gate width.
VBVGD : Breakdown Voltage, Gate-to-Drain; gate-to-
drain breakdown current (IBD) = 1.0 mA/mm
of gate width.
VBVGS : Breakdown Voltage, Gate-to-Source; gate-to-
source breakdown current (IBS) = 1.0 mA/mm
of gate width.
IMAX : Maximum IDS.
Test Conditions
For all material types, VDS is swept between 0.5 V
and VDSP in search of the maximum value of Ids.
This maximum IDS is recorded as IDS1. For
Intermediate and Power material, IDS1 is measured
at VGS = VG1 = -0.5 V. For Low Noise, HFET and
pHEMT material, VGS = VG1 = -0.25 V. For
LNBECOLC, use VGS = VG1 = -0.10 V.
VDS fixed at 2.0 V, VGS is swept to bring IDS to
0.5 mA/mm.
Drain fixed at ground, source not connected
(floating), 1.0 mA/mm forced into gate, gate-to-drain
voltage (VGD) measured is VBDGD and recorded as
BVGD; this cannot be measured if there are other
DC connections between gate-drain, gate-source or
drain-source.
Source fixed at ground, drain not connected
(floating), 1.0 mA/mm forced into gate, gate-to-
source voltage (VGS) measured is VBDGS and recorded
as BVGS; this cannot be measured if there are other
DC connections between gate-drain, gate-source or
drain-source.
Positive voltage is applied to the gate to saturate the
device. VDS is stepped between 0.5 V up to a
maximum of 3.5 V, searching for the maximum
value of IDS.
TriQuint Semiconductor Texas: Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com/mmw
3
Share Link: 