TIC236E 查看數據表（PDF） - Comset Semiconductors
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TIC236E Datasheet PDF : 3 Pages
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SEMICONDUCTORS
TIC236A, TIC236B, TIC236C, TIC236D, TIC236E, TIC236M,
TIC236N, TIC236S
SILICON TRIACS
• High current triacs
• 12 A RMS
• Glass Passivated Wafer
• 100 V to 800 V Off-State Voltage
• Max IGT of 50 mA (Quadrants 1-3)
• Compliance to ROHS
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VDRM
IT(RMS)
ITSM
IGM
TC
Tstg
TL
Repetitive peak off-state voltage
(see Note1)
Full-cycle RMS on-state current
at (or below) 70°C case
temperature (see note2)
Peak on-state surge current
full-sine-wave (see Note3)
Peak gate current
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm
from case for 10 seconds
Value
Unit
ABCDEMSN
100 200 300 400 500 600 700 800 V
12
A
100
A
±1
A
-40 to +110
°C
-40 to +125
°C
230
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
R∂JC
Junction to case thermal resistance
R∂JA
Junction to free air thermal resistance
Value
≤2
≤ 62.5
Unit
°C/W
02/10/2012
COMSET SEMICONDUCTORS
1|3
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