TK10A60W 查看數據表（PDF） - Toshiba
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TK10A60W Datasheet PDF : 10 Pages
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TK10A60W
6. Electrical Characteristics
6.1. Static Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source on-resistance
Symbol
Test Condition
IGSS
IDSS
V(BR)DSS
Vth
RDS(ON)
VGS = ±30 V, VDS = 0 V
VDS = 600 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 0.5 mA
VGS = 10 V, ID = 4.9 A
Min Typ. Max Unit
±1
µA
10
600
V
2.7
3.7
0.327 0.38
Ω
6.2. Dynamic Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Effective output capacitance
Gate resistance
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
MOSFET dv/dt ruggedness
Symbol
Test Condition
Ciss
Crss
Coss
Co(er)
rg
tr
ton
tf
toff
dv/dt
VDS = 300 V, VGS = 0 V, f = 1 MHz
VDS = 0 to 400 V, VGS = 0 V
VDS = OPEN, f = 1 MHz
See Figure 6.2.1
VDD = 0 to 400 V, ID = 4.9 A
Min Typ. Max Unit
700
pF
2.3
20
35
7.5
Ω
22
ns
45
5.5
75
50
V/ns
Fig. 6.2.1 Switching Time Test Circuit
6.3. Gate Charge Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Total gate charge (gate-source plus
gate-drain)
Gate-source charge 1
Gate-drain charge
Symbol
Test Condition
Min Typ. Max Unit
Qg
VDD ≈ 400 V, VGS = 10 V, ID = 9.7 A
20
nC
Qgs1
Qgd
4.5
9.5
6.4. Source-Drain Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Diode dv/dt ruggedness
Symbol
Test Condition
Min Typ. Max Unit
VDSF IDR = 9.7 A, VGS = 0 V
-1.7
V
trr
IDR = 4.9 A, VGS = 0 V
Qrr
-dIDR/dt = 100 A/µs
250
ns
2.2
µC
Irr
19
A
dv/dt IDR = 4.9 A, VGS = 0 V, VDD = 400 V
15
V/ns
3
2012-08-27
Rev.2.0
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