2N3055AG 查看數據表（PDF） - ON Semiconductor
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2N3055AG Datasheet PDF : 6 Pages
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2N3055AG (NPN), MJ15015G (NPN), MJ15016G (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
OFF CHARACTERISTICS (Note 2)
Collector−Emitter Sustaining Voltage (Note 3)
(IC = 200 mAdc, IB = 0)
Collector Cutoff Current
(VCE = 30 Vdc, VBE(off) = 0 Vdc)
(VCE = 60 Vdc, VBE(off) = 0 Vdc)
Collector Cutoff Current (Note 3)
(VCEV = Rated Value, VBE(off) = 1.5 Vdc)
Collector Cutoff Current
(VCEV = Rated Value, VBE(off) = 1.5 Vdc,
TC = 150_C)
Emitter Cutoff Current
(VEB = 7.0 Vdc, IC = 0)
SECOND BREAKDOWN (Note 3)
2N3055AG VCEO(sus)
60
−
MJ15015G, MJ15016G
120
−
ICEO
2N3055AG
−
0.7
MJ15015G, MJ15016G
−
0.1
2N3055AG
ICEV
−
5.0
MJ15015G, MJ15016G
−
1.0
ICEV
2N3055AG
−
30
MJ15015G, MJ15016G
−
6.0
2N3055AG
IEBO
−
5.0
MJ15015G, MJ15016G
−
0.2
Second Breakdown Collector Current with Base Forward Biased
IS/b
(t = 0.5 s non−repetitive)
2N3055AG
1.95
−
(VCE = 60 Vdc)
MJ15015G, MJ15016G
3.0
−
ON CHARACTERISTICS (Note 2 and 3)
DC Current Gain
(IC = 4.0 Adc, VCE = 2.0 Vdc)
(IC = 4.0 Adc, VCE = 4.0 Vdc)
(IC = 10 Adc, VCE = 4.0 Vdc)
Collector−Emitter Saturation Voltage
(IC = 4.0 Adc, IB = 400 mAdc)
(IC = 10 Adc, IB = 3.3 Adc)
(IC = 15 Adc, IB = 7.0 Adc)
Base−Emitter On Voltage
(IC = 4.0 Adc, VCE = 4.0 Vdc)
DYNAMIC CHARACTERISTICS (Note 3)
hFE
10
70
20
70
5.0
−
VCE(sat)
−
1.1
−
3.0
−
5.0
VBE(on)
0.7
1.8
Current−Gain − Bandwidth Product
(IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)
2N3055AG, MJ15015G
fT
MJ15016G
0.8
6.0
2.2
18
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob
60
600
SWITCHING CHARACTERISTICS (2N3055AG only) (Note 3)
RESISTIVE LOAD
Delay Time
td
Rise Time
Storage Time
(VCC = 30 Vdc, IC = 4.0 Adc,
tr
IB1 = IB2 = 0.4 Adc,
tp = 25 ms Duty Cycle v 2%
ts
Fall Time
tf
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2%.
3. Indicates JEDEC Registered Data. (2N3055A)
−
0.5
−
4.0
−
3.0
−
6.0
Unit
Vdc
mAdc
mAdc
mAdc
mAdc
Adc
−
Vdc
Vdc
MHz
pF
ms
ms
ms
ms
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