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TSM115 查看數據表(PDF) - STMicroelectronics

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TSM115
ST-Microelectronics
STMicroelectronics 
TSM115 Datasheet PDF : 17 Pages
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TSM115
Electrical Characteristics
Symbol
Parameter
Test Condition
Min Typ Max Unit
Rem
THrm
TLrm
High threshold
Low threshold
From Low to high
From high to low
1.87 1.93 1.99
V
1.0 1.25 1.4
V
Power Good (PG)
Ipgol
Vpgol
Tpgr
Sink current
Low output voltage
Rise time PG
VPg=0.4V
Ipg=10mA
Rpg=1K
10
mA
0.4
V
500
ns
Under Voltage Blanking (Tuv) and Power Good (Tpg) times
Iotuvtpg Current output source
THtuv High threshold blanking
TLtuv Low threshold blanking
THtpg High threshold power good
TLtpg Low threshold power good
Idtuvtpg Current discharge of TuvTpg
Vtuvtpgol Low output voltage
Vtuvtpgoh Clamp voltage
VinTuvTpg Input voltage
DIotuvtpg Current source drift in temperature
Vtuvtpg = 0V
From low to high voltage
From high to low voltage
From low to high voltage
From high to low voltage
Iotutpg = 1mA
Tmin < Tamb < Tmax
4.5
5
5.5
µA
0.287 0.312 0.337 V
0.25
V
1.218 1.25 1.282 V
0.9
1
1.1
V
2
5
mA
0.2
V
2.1
2.3
2.5
V
-0.3
2.3
V
1
µA
Remote (Trem) and Surge current blanking (Tsur) times
Iotrm TRem current source
Iotsur Tsur current source
THtrm High thresold voltage TRem
TLtrm Low thresold voltage TRem
Idtrmtsur Current discharge of TRemTsur
Vtrmtsurol Low output voltage
Vtrmtsuroh Clamp voltage
Vintrmtsur Input voltage
DIotrm Current source drift in temperature
DIotsur Current source drift in temperature
Vtrmtsur = 0V
Vtrmtsur = 0V
From low to high
From high to low
Iotmtsur = 1mA
Tmin < Tamb < Tmax
Tmin < Tamb < Tmax
90
100 110
µA
9
10
11
µA
1.218 1.25 1.282 V
0.9
1
1.1
V
2
5
mA
0.2
V
2.1
2.3
2.5
V
-0.3
2.3
V
5
µA
500
nA
Fault
Ifltol IFault sink current
VFault=0.4V
10
mA
Vfltol Low output voltage
IFault=10mA
0.4
V
THVcc High threshold voltage, Vcc low to high Rem low, all lines between
TLVcc Low threshold voltage, Vcc high to low UV and OV.
2.95
V
2.65
V
HystVcc Vcc hysteresis : THVcc-TLVcc
TBD 300 TBD mV
Rcrnt
VRcrn Output voltage
1.20 1.25 1.30
V
4/17

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