TSM221N 查看數據表（PDF） - STMicroelectronics
零件编号
产品描述 (功能)
生产厂家
TSM221N Datasheet PDF : 11 Pages
| |||
TSM221
ELECTRICAL CHARACTERISTICS
VCC+ = 3V, VCC- = 0V, RL, CL connected to Vcc/2, Tamb = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
Typ.
Max.
Vio
DVio
Iio
Iib
Avd
ICC
CMR
SVR
VOH
VOL
IO
Isink
GBP
SR
∅m
Input Offset Voltage
Tmin. ≤ Tamb ≤ Tmax.
Input Offset Voltage Drift
Input Offset Current 1)
Tmin. ≤ Tamb ≤ Tmax.
Input Bias Current (see note 1)
Tmin. ≤ Tamb ≤ Tmax.
Large Signal Voltage Gain
RL = 10kΩ , Vo = 1.5V to 3.5V
Tmin. ≤ Tamb ≤ Tmax
Total Supply Current 2)
No load
Common Mode Rejection Ratio
Vic = 0 to 3V, Vo = 1.5V
Supply Voltage Rejection Ratio
VCC+ = 2.7V to 3.3V, Vo = Vcc/2
High Level Output Voltage (R1 connected toVcc/2)
RL = 10k
RL = 600Ω
RL = 100Ω
Low Level Output Voltage (R1 connected toVcc/2)
RL = 10k
RL = 600Ω
RL = 100Ω
Output Short Circuit Current
VO =VCC-
Output Sink Current
VO =VCC+
Gain Bandwith Product
AVCL = 100, RL = 10k
CL = 100pF, f =100kHz
Slew Rate
AVCL = 1, RL = 10k
CL = 100pF, Vi = 1.3V to 1.7V
Phase Margin
10
12
5
1
100
200
1
150
300
3
10
2
415
600
70
50
80
2.90
2.96
2.30
2.60
2
30
70
300
400
900
20
40
20
40
0.8
0.3
30
en
Equivalent Input Noise Voltage
Rs = 100Ω, f = 1kHz
30
Cs Channel Separation
f= 1kHz
1. Maximum values including unavoidable inaccuracies of the industrial test.
2. Op-amps and comparators
120
Unit
mV
µV/°C
pA
pA
V/mV
µA
dB
dB
V
mV
mA
mA
MHz
V/µs
degrees
---n----V----
Hz
dB
4/11
Share Link: 