TSML3710 查看數據表（PDF） - Vishay Semiconductors
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TSML3710 Datasheet PDF : 8 Pages
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TSML3710
Vishay Semiconductors
High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs
Description
TSML3710 is an infrared emitting diode in GaAlAs on
GaAs technology in miniature PLCC-2 SMD package.
Features
• SMT IRED with extra high radiant power
• Low forward voltage
• Compatible with
equipment
automatic
placement
e3
• EIA and ICE standard package
• Suitable for infrared, vapor phase and wavesolder
process
• Packed in 8 mm tape
• Suitable for pulse current operation
• Extra wide angle of half intensity ϕ = ± 60°
• Peak wavelength λp = 950 nm
• Matched with TEMT3700 phototransistor
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
94 8553
Applications
• IR emitter in photointerrupters, transmissive sen-
sors and reflective sensors
• Household appliance
• IR emitter in low space applications
• Tactile keyboards
Parts Table
Part
TSML3710
Ordering code
TSML3710-GS08
Remarks
MOQ 7500pcs (1500 pcs per reel)
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
tp/T = 0.5, tp = 100 µs
tp = 100 µs
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
t ≤ 10 sec
Thermal resistance junction/
ambient
Symbol
Value
Unit
VR
5
V
IF
100
mA
IFM
200
mA
IFSM
1
A
PV
170
mW
Tj
100
°C
Tamb
- 40 to + 85
°C
Tstg
- 40 to +100
°C
Tsd
260
°C
RthJA
450
K/W
Document Number 81075
Rev. 1.6, 21-Feb-07
www.vishay.com
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