TSML3710
Vishay Semiconductors
Basic Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Forward voltage
Temp. coefficient of VF
Reverse current
Junction capacitance
Radiant intensity
Radiant power
Temp. coefficient of φe
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temp. coefficient of λp
Rise time
Fall time
Virtual source diameter
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 µs
IF = 1 mA
VR = 5 V
VR = 0 V, f = 1 MHz, E = 0
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 µs
IF = 100 mA, tp = 20 ms
IF = 100 mA
IF = 100 mA
IF = 100 mA
IF = 100 mA
IF = 20 mA
IF = 1 A
IF = 20 mA
IF = 1 A
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
250
200
150
RthJA
100
50
0
0 10 20 30 40 50 60 70 80 90 100
16846
Tamb - Ambient Temperature (°C)
Figure 1. Power Dissipation vs. Ambient Temperature
Symbol
Min
VF
VF
TKVF
IR
Cj
Ie
4
Ie
φe
TKφe
ϕ
λp
Δλ
TKλp
tr
tr
tf
tf
∅
Typ.
1.35
2.6
- 1.85
25
8
60
35
- 0.6
± 60
950
50
0.2
800
500
800
500
0.44
Max
Unit
1.7
V
3.2
V
mV/K
100
µA
pF
20
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
ns
ns
mm
125
100
75
RthJA
50
25
0
0 10 20 30 40 50 60 70 80 90 100
16847
Tamb - Ambient Temperature (°C)
Figure 2. Forward Current vs. Ambient Temperature
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Document Number 81075
Rev. 1.6, 21-Feb-07