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TSML3710 查看數據表(PDF) - Vishay Semiconductors
零件编号
产品描述 (功能)
生产厂家
TSML3710
High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs
Vishay Semiconductors
TSML3710 Datasheet PDF : 8 Pages
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TSML3710
Vishay Semiconductors
1.25
1.0
0.75
0.5
0.25
0
900
94 7994
I
F
= 100 mA
950
λ
-
W
a
v
elength (nm)
1000
Figure 9. Relative Radiant Power vs. Wavelength
Package Dimensions in mm
3.5 ± 0.2
0° 10° 20°
30°
40°
1.0
0.9
50°
0.
8
60°
0.7
70°
8
0°
0.6 0.4 0.2
94
8
013
0 0.2
0.4 0.6
Figure 10. Relative Radiant Intensity vs. Angular Displacement
technical dra
w
ings
according to DI
N
specifications
Pin identification
C
A
Ø
2.4
3+
0.15
Dra
w
ing-
N
o.: 6.541-5025.01-4
Iss
u
e:
8
; 22.11.05
95 11314-1
Mountin
g
Pad Layout
1.2
area co
v
ered
w
ith
solder resist
4
1.6 (1.9)
www.vishay.com
4
Document Number 81075
Rev. 1.6, 21-Feb-07
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