V30100SG-M3-4W 查看數據表（PDF） - Vishay Semiconductors
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V30100SG-M3-4W
Vishay Semiconductors
V30100SG-M3-4W Datasheet PDF : 5 Pages
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New Product
V30100SG, VI30100SG
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 C unless otherwise noted)
35
Resistive or Inductive Load
30
V(I)30100SG
25
20
15
10
5
0
0
25
50
75
100 125 150
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
32
D = 0.5 D = 0.8
28
D = 0.3
24
D = 0.2
20
D = 0.1
D = 1.0
16
12
T
8
4
D = tp/T
tp
0
0 4 8 12 16 20 24 28 32 36
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
100
TA = 150 °C
10
TA = 125 °C
TA = 25 °C
1
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
100
TA = 150 °C
10
TA = 125 °C
1
0.1
0.01
TA = 25 °C
0.001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics
10 000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1000
100
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
10
Junction to Case
1
0.1
0.01
V(I)30100SG
0.001
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
Document Number: 89191 For technical questions within your region, please contact one of the following:
Revision: 25-Mar-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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