ZVN4424G(1995) 查看數據表（PDF） - Diodes Incorporated.

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ZVN4424G
(Rev.:1995)

SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Diodes Incorporated. 

ZVN4424G

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN. TYP MAX. UNIT CONDITIONS.

Drain-Source Breakdown BVDSS 240

Voltage

V

ID=1mA, VGS=0V

Gate-Source Threshold

Voltage

VGS(th)

0.8

1.3

1.8

V

ID=1mA, VDS= VGS

Gate-Body Leakage

IGSS

100 nA VGS=± 40V, VDS=0V

On State Drain-Current

ID(on)

0.8 1.4

A

VDS=10V, VGS=10V

Zero Gate Voltage Drain

IDSS

Current

10 µA

100 µA

VDS=240 V, VGS=0V

VDS=190 V, VGS=0V, T=125°C

Static Drain-Source

On-State Resistance

RDS(on)

4

5.5 Ω

4.3 6

Ω

VGS=10V,ID=500mA*

VGS=2.5V,ID=100mA*

Forward

gfs

Transconductance (1) (2)

0.4 0.75

S

VDS=10V,ID=0.5A

Input Capacitance (2)

Ciss

Common Source Output Coss

Capacitance (2)

110 200 pF

15 25 pF

VDS=25V, VGS=0V, f=1MHz

Reverse Transfer

Crss

Capacitance (2)

3.5 15 pF

Turn-On Delay Time (2)(3) td(on)

2.5 5

ns

Rise Time (2)(3)

Turn-Off Delay Time (2)(3)

tr

td(off)

5

8

ns

VDD ≈50V, ID =0.25A, VGEN=10V

40 60 ns

Fall Time (2)(3)

tf

16 25 ns

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%

(2) Sample test.

(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator

Spice parameter data is available upon request for this device

3 - 416

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