ZVN4525Z 查看數據表（PDF） - Diodes Incorporated.
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ZVN4525Z Datasheet PDF : 7 Pages
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ZVN4525Z
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
250
V
Gate-Source Voltage
VGSS
±40
V
Continuous Drain Current, VGS = 10V
Steady TA = +25°C (Note 5)
State TA = +70°C (Note 5)
ID
240
192
mA
Maximum Body Diode Forward Current
IS
1.1
A
Pulsed Drain Current (Note 7)
IDM
1.44
A
Pulsed Source Current (Note 7)
ISM
1.44
A
Thermal Characteristics
Total Power Dissipation
Linear Derating Factor
Characteristic
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
TA = +25°C (Note 5)
Steady State (Note 5)
Steady State (Note 6)
Symbol
PD
RθJA
TJ, TSTG
Value
1.2
9.6
103
50
-55 to +150
Unit
W
mW/°C
°C/W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 8)
Diode Forward Voltage (Note 8)
Forward Transconductance (Note 10)
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
gfs
Ciss
Coss
Crss
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Min
250
0.8
0.3
Typ
285
35
1
1.4
5.6
5.9
6.4
475
72
11
3.6
2.6
0.2
0.5
1.25
1.70
11.40
3.50
186
34
Max
500
100
1.8
8.5
9.0
9.5
0.97
3.65
0.28
0.70
260
48
Unit
Test Condition
V
VGS = 0V, ID = 1mA
nA VDS = 250V, VGS = 0V
nA VGS = 40V, VDS = 0V
V
VDS = VGS, ID = 1mA
VGS = 10V, ID = 500mA
Ω
VGS = 4.5V, ID = 360mA
VGS = 2.4V, ID = 20mA
V
VGS = 0V, IS = 360mA
S
VDS = 10V, ID = 0.3A
pF
VDS = 25V, VGS = 0V
f = 1.0MHz
nC VDS = 25V, ID = 360mA, VGS = 10V
ns
VDD = 50V, RG = 6.0Ω,
ID= 200mA, RD = 4.4Ω
ns
nC IF = 360mA, dI/dt = 100A/μs
Notes:
5. For a device surface mounted on 25mm X 25mm FR-4 PCB with high coverage of single sided 1oz copper, in still air condition.
6. For a device surface mounted on FR4 PCB measured at t 5 secs.
7. Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal.
8. Measured under pulsed conditions. Width=300μs. Duty cycle ≤ 2%.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
ZVN4525Z
Document number: DS33384 Rev. 3 - 2
2 of 7
www.diodes.com
April 2015
© Diodes Incorporated
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