ZXM61N02F 查看數據表（PDF） - Zetex => Diodes

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ZXM61N02F

20V N-CHANNEL ENHANCEMENT MODE MOSFET

Zetex => Diodes 

ZXM61N02F

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Drain-Source Voltage

Gate Source Voltage

Continuous Drain Current (VGS=4.5V; TA=25°C)(b)

(VGS=4.5V; TA=70°C)(b)

Pulsed Drain Current (c)

Continuous Source Current (Body Diode) (b)

Pulsed Source Current (Body Diode)

Power Dissipation at TA=25°C (a)

Linear Derating Factor

Power Dissipation at TA=25°C (b)

Linear Derating Factor

Operating and Storage Temperature Range

SYMBOL

VDSS

VGS

ID

IDM

IS

ISM

PD

PD

Tj:Tstg

LIMIT

20

± 12

1.7

1.3

7.4

0.8

7.4

625

5

806

6.4

-55 to +150

UNIT

V

V

A

A

A

A

mW

mW/°C

mW

mW/°C

°C

THERMAL RESISTANCE

PARAMETER

SYMBOL

VALUE

UNIT

Junction to Ambient (a)

Junction to Ambient (b)

RθJA

RθJA

200

°C/W

155

°C/W

NOTES

(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,

in still air conditions

(b) For a device surface mounted on FR4 PCB measured at tр5 secs.

(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal

Impedance graph.

ISSUE 1 - JUNE 2004

2

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