ZXMN6A11GTA(2010) 查看數據表（PDF） - Diodes Incorporated.
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ZXMN6A11GTA Datasheet PDF : 8 Pages
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A Product Line of
Diodes Incorporated
ZXMN6A11G
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 6)
Forward Transconductance (Notes 6 & 7)
Diode Forward Voltage (Note 6)
Reverse Recovery Time (Note 7)
Reverse Recovery Charge (Note 7)
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Charge (Note 8)
Total Gate Charge (Note 8)
Gate-Source Charge (Note 8)
Gate-Drain Charge (Note 8)
Turn-On Delay Time (Note 8)
Turn-On Rise Time (Note 8)
Turn-Off Delay Time (Note 8)
Turn-Off Fall Time (Note 8)
Symbol Min
BVDSS
60
IDSS
⎯
IGSS
⎯
VGS(th)
1.0
⎯
RDS (ON)
⎯
gfs
⎯
VSD
⎯
trr
⎯
Qrr
⎯
Ciss
⎯
Coss
⎯
Crss
⎯
Qg
⎯
Qg
⎯
Qgs
⎯
Qgd
⎯
tD(on)
⎯
tr
⎯
tD(off)
⎯
tf
⎯
Typ
⎯
⎯
⎯
⎯
0.105
0.150
4.9
0.85
21.5
20.5
330
35.2
17.1
3.0
5.7
1.25
0.86
1.95
3.5
8.2
4.6
Notes:
6. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%.
7. For design aid only, not subject to production testing.
8. Switching characteristics are independent of operating junction temperature.
Max
⎯
1.0
±100
3.0
0.120
0.180
⎯
0.95
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Test Condition
V ID = 250μA, VGS = 0V
μA VDS = 60V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V
ID = 250μA, VDS = VGS
Ω
VGS = 10V, ID = 2.5A
VGS = 4.5V, ID = 2A
S VDS = 15V, ID = 2.5A
V IS = 2.8A, VGS = 0V, TJ = 25°C
ns IS = 2.8A, di/dt = 100A/μs
nC TJ = 25°C
pF
VDS = 40V, VGS = 0V,
f = 1.0MHz
VGS = 4.5V
nC
VGS = 10V
VDS = 15V
ID = 2.5A
ns VDD = 30V, ID = 2.5A,
RG = 6Ω, VGS = 10V
ZXMN6A11G
Document number: DS33556 Rev. 5 - 2
4 of 8
www.diodes.com
October 2010
© Diodes Incorporated
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