042N10N(2010) 查看數據表（PDF） - Infineon Technologies
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042N10N Datasheet PDF : 11 Pages
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1 Power dissipation
P tot=f(T C)
IPB042N10N3 G IPI045N10N3 G
IPP045N10N3 G
2 Drain current
I D=f(T C); V GS≥10 V
250
120
100
200
80
150
60
100
40
50
20
0
0
50
100
150
T C [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
103
limited by on-state
resistance
102
1 µs
10 µs
100 µs
1 ms
101
10 ms
DC
100
10-1
10-1
Rev. 2.5
100
101
102
V DS [V]
0
200
0
50
100
150
T C [°C]
4 Max. transient thermal impedance
Z thJC=f(t p)
parameter: D =t p/T
100
0.5
0.2
10-1 0.1
0.05
0.02
0.01
single pulse
10-2
103
page 4
t p [s]
200
2010-01-13
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