ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 4. Static Electrical Characteristics (continued)
Characteristics noted under conditions 3.1 V VDD 5.5 V, 5.5 V VPWR 18 V, -40 C TC 125 C, unless otherwise
noted. Where applicable, typical values reflect the parameter’s approximate average value with VPWR = 13 V, TA = 25 C.
Characteristic
Symbol
Min
Typ
Max
Unit
DIGITAL INTERFACE
Input Logic High-voltage Thresholds(9)
Input Logic Low-voltage Thresholds(9)
IN5, IN6, EN Input Logic Current
IN5, IN6, EN = 0 V
VIH
0.7 VDD
–
VDD + 0.3
V
VIL
GND - 0.3
–
0.2 VDD
V
I IN5, I IN6, I EN
A
-10
–
10
IN5, IN6 Pull-down Current
0.8 to 5.0 V
I IN5, I IN6,
30
A
45
100
EN Pull-down Current
EN = 5.0 V
I EN
33879
33879A
A
20
45
100
20
45
110
SCLK, DI Input, Tri-state DO Output
0 to 5.0 V
I SCK, I DI, I TRI-
A
DO
-10
–
10
CS Input Current
CS = VDD
ICS
A
-10
–
10
CS Pull-up Current
CS = 0 V
ICS
A
-30
–
-100
CS Leakage Current to VDD
CS = 5.0 V, VDD = 0 V
ICS(LKG)
–
A
–
10
DO High State Output Voltage
IDO-HIGH = -1.6 mA
VDOHIGH
V
VDD - 0.4
–
VDD
DO Low State Output Voltage
IDO-LOW = 1.6 mA
VDOLOW
–
Input Capacitance on SCLK, DI, Tri-state DO, IN5, IN6, EN(10)
CIN
–
Notes
9. Upper and lower logic threshold voltage levels apply to DI, CS, SCLK, IN5, IN6, and EN.
10. This parameter is guaranteed by design; however, it is not production tested.
V
–
0.4
–
20
pF
Analog Integrated Circuit Device Data
Freescale Semiconductor
33879
9