STL24N60M2 查看數據表（PDF） - STMicroelectronics

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STL24N60M2

N-channel 600 V, 0.186 Ω typ., 18 A MDmesh™ M2 Power MOSFET in a PowerFLAT™ 8x8 HV package

STMicroelectronics 

STL24N60M2

Figure 8: Capacitance variations

C

AM15665v1

(pF)

Electrical characteristics

Figure 9: Normalized gate threshold voltage

vs temperature

1000

Ciss

100

10

1

0.1

1

Coss

Crss

10

100 VDS(V)

Figure 10: Normalized on-resistance vs

temperature

RDS(on)

(norm)

2.5

2.3

ID=9 A

VGS=10 V

2.1

1.9

1.7

1.5

1.3

1.1

0.9

0.7

0.5

-50 -25 0 25 50 75 100 125 TJ(°C)

Figure 12: Output capacitance stored energy

Eoss(µJ)

AM15669v1

8

7

6

5

4

3

2

1

0

0 100 200 300 400 500 600 VDS(V)

Figure 11: Normalized V(BR)DSS vs

temperature

Figure 13: Source-drain diode forward

characteristics

DocID024777 Rev 3

7/15

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