STL24N60M2 查看數據表（PDF） - STMicroelectronics

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STL24N60M2

N-channel 600 V, 0.186 Ω typ., 18 A MDmesh™ M2 Power MOSFET in a PowerFLAT™ 8x8 HV package

STMicroelectronics 

Test circuits

3

Test circuits

Figure 14: Switching times test circuit for

resistive load

STL24N60M2

Figure 15: Gate charge test circuit

VD

VGS

RG

PW

RL

2200

µF

+

D.U.T.

GND1

(driver signal)

GND2

(power)

3.3

µF VDD

Figure 16: Test circuit for inductive load

switching and diode recovery times

G

25Ω

A

D

D.U.T.

S

B

AA

FAST

DIODE

B

B

L=100µH

D

G

RG

S

D.U.T.

3.3

1000

µF + µF

VDD

GND1

GND2

Figure 17: Unclamped inductive load test

circuit

L

VD

2200

3.3

µF

µF

VDD

+

ID

Vi

D.U.T.

Pw

GND1

GND2

AM15858v1

Figure 18: Unclamped inductive waveform

Figure 19: Switching time waveform

8/15

DocID024777 Rev 3

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