2DB1188P(2011) 查看數據表（PDF） - Diodes Incorporated.
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2DB1188P Datasheet PDF : 6 Pages
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1.2
1.0
0.8
TA = -55°C
0.6
TA = 25°C
0.4 TA = 85°C
0.2 TA = 150°C
IC/IB = 10
0
0.0001 0.001
0.01
0.1
1
10
-IC, COLLECTOR CURRENT (A)
Fig. 5 Typical Base-Emitter Saturation Voltage
vs. Collector Current
140
120
100
80
60
40
20
0
0 10 20 30 40 50 60 70 80 90 100
IE, Emitter Current (mA)
Fig. 7 Typical Gain-Bandwidth Product vs. Emitter Current
2DB1188P/Q/R
60
50
f = 1MHz
40
30
20
10
0
0.01
0.1
1
10
100
VR, REVERSE VOLTAGE (V)
Fig. 6 Typical Output Capacitance Characteristics
Package Outline Dimensions
D1
R0.200
E
B
L
B1
8° (4X)
e
e1
A
D
2DB1188P/Q/R
Document number: DS31144 Rev. 5 - 2
C
H
SOT89
Dim Min
Max
A
1.40
1.60
B
0.44
0.62
B1 0.35
0.54
C
0.35
0.43
D
4.40
4.60
D1 1.52
1.83
E
2.29
2.60
e
1.50 Typ
e1
3.00 Typ
H
3.94
4.25
L
0.89
1.20
All Dimensions in mm
5 of 6
www.diodes.com
November 2011
© Diodes Incorporated
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