2DB1188Q-13R 查看數據表（PDF） - Diodes Incorporated.

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2DB1188Q-13R

32V PNP MEDIUM POWER TRANSISTOR IN SOT89

Diodes Incorporated. 

2DB1188P/Q/R

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Pulse Collector Current

Base Current

Symbol

VCBO

VCEO

VEBO

IC

ICM

IB

Value

-40

-32

-6

-2

-3

-500

Unit

V

V

V

A

A

mA

Thermal Characteristics (@TA = +25°C unless otherwise specified.)

Characteristic

Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

Thermal Resistance, Junction to Leads (Note 6)

Operating and Storage Temperature Range

Symbol

PD

RθJA

RθJL

TJ, TSTG

Value

1

125

19

-55 to +150

Unit

W

°C/W

°C/W

°C

Notes:

5. For a device surface mounted on 15mm x 15mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured

when operating in a steady-state condition.

6. Thermal resistance from junction to solder-point (on the exposed collector pad).

2DB1188P/Q/R

Document number: DS31144 Rev. 7 - 2

2 of 7

www.diodes.com

February 2013

© Diodes Incorporated

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