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NTMS10P02R2(2003) 查看數據表(PDF) - ON Semiconductor

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NTMS10P02R2
(Rev.:2003)
ON-Semiconductor
ON Semiconductor 
NTMS10P02R2 Datasheet PDF : 6 Pages
1 2 3 4 5 6
NTMS10P02R2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (Note 4.)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = −250 µAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = −20 Vdc, VGS = 0 Vdc, TJ = 25°C)
(VDS = −20 Vdc, VGS = 0 Vdc, TJ = 70°C)
Gate−Body Leakage Current
(VGS = −12 Vdc, VDS = 0 Vdc)
Gate−Body Leakage Current
(VGS = +12 Vdc, VDS = 0 Vdc)
IDSS
IGSS
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = −250 µAdc)
Temperature Coefficient (Negative)
VGS(th)
Static Drain−to−Source On−State Resistance
(VGS = −4.5 Vdc, ID = −10 Adc)
(VGS = −2.5 Vdc, ID = −8.8 Adc)
Forward Transconductance (VDS = −10 Vdc, ID = −10 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = −16 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Notes 5. & 6.)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDD = −10 Vdc, ID = −1.0 Adc,
VGS = −4.5 Vdc,
RG = 6.0 )
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDD = −10 Vdc, ID = −10 Adc,
VGS = −4.5 Vdc,
RG = 6.0 )
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
(VDS = −10 Vdc,
VGS = −4.5 Vdc,
ID = −10 Adc)
BODY−DRAIN DIODE RATINGS (Note 5.)
Diode Forward On−Voltage
(IS = −2.1 Adc, VGS = 0 Vdc)
(IS = −2.1 Adc, VGS = 0 Vdc, TJ = 125°C)
Diode Forward On−Voltage
(IS = −10 Adc, VGS = 0 Vdc)
(IS = −10 Adc, VGS = 0 Vdc, TJ = 125°C)
Reverse Recovery Time
(IS = −2.1 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
Reverse Recovery Stored Charge
4. Handling precautions to protect against electrostatic discharge is mandatory.
5. Indicates Pulse Test: Pulse Width = 300 µs max, Duty Cycle = 2%.
6. Switching characteristics are independent of operating junction temperature.
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Qtot
Qgs
Qgd
VSD
VSD
trr
ta
tb
QRR
Min
−20
−0.6
Typ
Max
Unit
−12.1
−1.0
−5.0
−100
100
Vdc
mV/°C
µAdc
nAdc
nAdc
−0.88
2.8
0.012
0.017
30
−1.20
0.014
0.020
Vdc
mV/°C
Mhos
3100
3640
pF
1100
1670
475
1010
25
35
ns
40
65
110
190
110
190
25
ns
100
100
125
48
70
nC
6.5
17
−0.72
−1.2
Vdc
−0.60
−0.90
Vdc
−0.75
65
100
ns
25
40
0.075
µC
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