FJN3303F 查看數據表（PDF） - Fairchild Semiconductor
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FJN3303F Datasheet PDF : 7 Pages
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December 2009
FJN3303F
High Voltage Fast-Switching NPN Power Transistor
Features
• High Voltage Capability
• High Switching Speed
• Suitable for Electronic Ballast and Charger
• Green packaging
1
TO-92
1. Emitter 2. Collector 3.Base
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC
Collector Current (DC)
ICP
Collector Current (Pulse) *
IB
Base Current (DC)
IBP
Base Current (Pulse) *
TJ
Junction Temperature
TSTG Storage Temperature range
* Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10%
Value
700
400
9
1.5
3
0.75
1.5
150
-65 to +150
Units
V
V
V
A
A
A
A
°C
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
PD
RθJC
RθJA
Total Device Dissipation
Thermal Resistance Junction-Case
TC = 25°C
TA = 25°C
Thermal Resistance Junction-Ambient
Value
1.1
650
48
190
Units
W
mW
°C/W
°C/W
Ordering Information
Part Number
Marking Info.
FJN3303FBU
J3303F
FJN3303FTA
J3303F
Package
TO-92 (Straight)
TO-92 (Form)
Packing Method
BULK
AMMO
© 2009 Fairchild Semiconductor Corporation
FJN3303F Rev. A1
1
Remarks
Green EMC
Green EMC
www.fairchildsemi.com
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