2N4900 查看數據表（PDF） - Quanzhou Jinmei Electronic
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2N4900 Datasheet PDF : 3 Pages
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Product Specification
Silicon PNP Power Transistors
www.jmnic.com
2N4898 2N4899 2N4900
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(sus)
Collector-emitter
sustaining voltage
2N4898
2N4899
2N4900
VCEsat Collector-emitter saturation voltage
VBEsat Collector-emitter saturation voltage
VBE
Base-emitter on voltage
2N4898
ICEO
Collector cut-off current 2N4899
2N4900
ICEX
Collector cut-off current
ICBO
Collector cut-off current
IEBO
hFE-1
hFE-2
hFE-3
Emitter cut-off current
DC current gain
DC current gain
DC current gain
COB
Output capacitance
fT
Transition frequency
CONDITIONS
IC=0.1A ;IB=0
IC=1A; IB=0.1A
IC=1A ;IB=0.1A
IC=1A ; VCE=1V
VCE=20V; IB=0
VCE=30V; IB=0
VCE=40V; IB=0
VCE=Rated VCEO; VBE(off)=1.5V
TC=150℃
VCB=Rated VCBO; IE=0
VEB=5V; IC=0
IC=50mA ; VCE=1V
IC=500mA ; VCE=1V
IC=1.0A ; VCE=1V
IE=0;VCB=10V;f=1MHz
IC=250mA;VCE=10V
MIN TYP. MAX UNIT
40
60
V
80
0.6
V
1.3
V
1.3
V
0.5 mA
0.1
1.0
mA
0.1 mA
1.0 mA
40
20
100
10
100 pF
3.0
MHz
JMnic
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