2N6486 查看數據表（PDF） - Quanzhou Jinmei Electronic
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2N6486 Datasheet PDF : 3 Pages
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JMnic
Silicon NPN Power Transistors
Product Specification
2N6486 2N6487 2N6488
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6486
2N6487 IC=0.2A ;IB=0
2N6488
VCEsat-1 Collector-emitter saturation voltage IC=5A;IB=0.5A
VCEsat-2 Collector-emitter saturation voltage IC=15A;IB=5A
VBE-1
Base-emitter on voltage
IC=5A ; VCE=4V
VBE-2
ICEX
ICEO
Base-emitter on voltage
2N6486
Collector cut-off current
VBE=-1.5V
2N6487
2N6488
2N6486
IC=15A ; VCE=4V
VCE=45V;
VCE=40V;TC=150℃
VCE=65V;
VCE=60V;TC=150℃
VCE=85V;
VCE=80V;TC=150℃
VCE=20V;IB=0
Collector cut-off current 2N6487 VCE=30V;IB=0
2N6488 VCE=40V;IB=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=5A ; VCE=4V
hFE-2
DC current gain
IC=15A ; VCE=4V
MIN TYP. MAX UNIT
40
60
V
80
1.3
V
3.5
V
1.3
V
3.5
V
0.5
5.0
0.5
5.0
mA
0.5
5.0
1.0 mA
1.0 mA
20
150
5
2
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