2SA733P 查看數據表（PDF） - NEC => Renesas Technology

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2SA733P

PNP SILICON TRANSISTOR

NEC => Renesas Technology 

DATA SHEET

PNP SILICON TRANSISTOR

2SA733

PNP SILICON TRANSISTOR

DESCRIPTION

The 2SA733 is designed for use in diver stage of AF amplifier.

FEATURES

• High hFE and Excellent Linearity: 200 TYP.

hFE (VCE = −6.0 V, IC = −1.0 mA)

PACKAGE DRAWING (Unit: mm)

φ 5.2 MAX.

ABSOLUTE MAXIMUM RATINGS

Maximum Temperature

Storage Temperature

Junction Temperature

Maximum Power Dissipations (TA = 25°C)

Total Power Dissipation

−55 to +150°C

+150°C Maximum

250 mW

Maximum Voltages and Currents (TA = 25°C)

VCBO

Collector to Base Voltage

VCEO

Collector to Emitter Voltage

VEBO

Emitter to Base Voltage

IC

Collector Current

IB

Base Current

Note Pulse Test PW ≤ 350 µs, Duty Cycle ≤ 2%

−60 V

−50 V

−5.0 V

−100 mA

−20 mA

ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTIC

DC Current Gain

Gain Bandwidth Product

Output Capacitance

Collector Cutoff Current

Emitter Cutoff Current

Base to Emitter Voltage

Collector Saturation Voltage

SYMBOL

hFE

fT

Cob

ICBO

IEBO

VBE

VCE(sat)

TEST CONDITIONS

VCE = −6.0 V, IC = −1.0 mA

VCE = −6.0 V, IE = 10 mA

VCB = −10 V, IE = 0, f = 1.0 MHz

VCB = −60 V, IE = 0 A

VEB = −5.0 V, IC = 0 A

ICE = −6.0 A, IC = −1.0 mA

IC = −100 mA, IB = −10 mA

0.5

1.27

2.54

123

1: Emitter

2: Collector

3: Base

EIAJ: SC-43B

JEDEC: TO-92

IEC: PA33

MIN.

90

−0.58

TYP.

200

180

4.5

−0.62

−0.18

MAX.

600

−0.1

−0.1

−0.68

−0.3

UNIT

MHz

pF

µA

µA

V

V

CLASSIFICATION OF hFE

Rank

Range

R

90 to 180

Q

135 to 270

P

200 to 400

Remark hFE Test Conditions: VCE = −6.0 V, IC = −1.0 mA

E

300 to 600

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. D10868EJ7V0DS00 (7th edition)

(Previous No. TC-3004B)

The mark shows major revised points.

Date Published March 2004 N CP(K)

Printed in Japan

c

1995

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