2SB1317 查看數據表（PDF） - Panasonic Corporation
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2SB1317 Datasheet PDF : 4 Pages
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Power Transistors
2SB1317
Silicon PNP triple diffusion planar type
For high power amplification
Complementary to 2SD1975
/ ■ Features
e. • Excellent collector current IC characteristics of forward current
e tag transfer ratio hFE
s • Wide safe operation area
c le • High transition frequency fT
n d yc • Optimum for the output stage of a Hi-Fi audio amplifier
lifec ■ Absolute Maximum Ratings TC = 25°C
a e ct Parameter
Symbol Rating
Unit
n u rodu Collector-base voltage (Emitter open) VCBO
−180
V
P Collector-emitter voltage (Base open) VCEO
−180
V
te tin ur . Emitter-base voltage (Collector open) VEBO
−5
V
g fo pe tion Collector current
IC
−15
A
in ty a Peak collector current
ICP
−25
A
w e d rm Collector power dissipation
PC
150
W
in n llo nc pe pe fo Ta=25°C
3.5
fo na ty ty t in Junction temperature
Tj
150
°C
a o des inte nce ued pe tes Storage temperature
Tstg −55 to +150 °C
20.0±0.5
φ 3.3±0.2
Unit: mm
5.0±0.3
(3.0)
(1.5)
2.0±0.3
3.0±0.3
1.0±0.2
5.45±0.3
10.9±0.5
(1.5)
2.7±0.3
0.6±0.2
123
1: Base
2: Collector
3: Emitter
TOP-3L-A1 Package
c d inclued maintenacontinued tyout lat/sc/en ■ Electrical Characteristics TC = 25°C ± 3°C
M is tinue lan ma dis tin ab .ne Parameter
Symbol
Conditions
p d on RL ic Base-emitter voltage
on ne isc U on Collector-base cutoff current (Emitter open)
isc pla d ing as Emitter-base cutoff current (Collector open)
D /D w an Forward current transfer ratio
nance isit follohttp://p Collector-emitter saturation voltage
inte e v Transition frequency
a s Collector output capacitance
M Plea (Common base, input open circuited)
VBE
ICBO
IEBO
hFE1
hFE2 *
hFE3
VCE(sat)
fT
Cob
VCE = −5 V, IC = −8 A
VCB = −180 V, IE = 0
VEB = −3 V, IC = 0
VCE = −5 V, IC = −20 mA
VCE = −5 V, IC = −1 A
VCE = −5 V, IC = −8 A
IC = −10 A, IB = −1 A
VCE = −5 V, IC = − 0.5 A, f = 1 MHz
VCB = −10 V, IE = 0, f = 1 MHz
Min Typ Max Unit
−1.8
V
−50 µA
−50 µA
20
60
200
20
−2.5
V
20
MHz
200
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
S
P
hFE2
60 to 120
80 to 160 100 to 200
Publication date: March 2003
SJD00066BED
1
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