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零件编号
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2SB1389 查看數據表(PDF) - Renesas Electronics
零件编号
产品描述 (功能)
生产厂家
2SB1389
Silicon PNP Triple Diffused
Renesas Electronics
2SB1389 Datasheet PDF : 7 Pages
1
2
3
4
5
6
7
Maximum Collector Dissipation Curve
30
20
10
0
50
100
150
Case Temperature T
C
(
°
C)
2SB1389
Area of Safe Operation
–20
–10
i
C (peak)
–5
I
C (max)
–2
–1.0
–0.5
–0.2
–0.1
–0.05 Ta = 25
°
C
1 Shot pulse
–0.02
–3
–10
–30
–100 –300
Collector to emitter Voltage V
CE
(V)
Typical Output Characteristics
–5
T
C
= 25
°
C
–4
–2.0
–1.8
–1.6
–1.4
–1.2
–3
–1.0
–0.8
–2
–0.6
–1
–0.4 mA
I
B
= 0
0
–1 –2 –3 –4 –5
Collector to emitter Voltage V
CE
(V)
10,000
DC Current Transfer Ratio vs.
Collector Current
V
CE
= –3 V
3,000
1,000
=
75
°
C
T
C
25
°
–C25
°
C
300
100
–0.1 –0.3
–1.0
–3
–10
Collector current I
C
(A)
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