2SB1412 查看數據表（PDF） - Unisonic Technologies
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2SB1412 Datasheet PDF : 5 Pages
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2SB1412
TYPICAL CHARACTERISTICS(Cont.)
Collector-emitter Saturation Voltage
vs.Collector Current (II)
-5
Ic/IB=10
-2
-1
-0.5
-0.2
-0.1
Ta=100℃
-0.05
Ta=25℃
-0.02
Ta= -25℃
-0.01
-2m -5m -0.01-0.02-0.05 -0.1-0.2-0.5 -1 -2 -5 -10
Collector Current : Ic(A)
Collector-emitter Saturation Voltage
vs.Collector Current (IV)
-5
Ic/IB=40
-2
Ta= -25℃
-1
Ta=25℃
-0.5
-0.2
-0.1
-0.05
Ta=100℃
-0.02
-0.01
-2m -5m -0.01-0.02-0.05 -0.1-0.2-0.5 -1 -2 -5 -10
Collector Current : Ic(A)
1000
500
200
100
Gain Bandwidth Product vs.Emitter
Current
Ta=25℃
VcE= -6V
50
20
10
5
2
1
12
5 10 20 50 100200 500 1000
Emitter Current : IE(mA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
PNP SILICON TRANSISTOR
Collector-emitter Saturation Voltage
vs.Collector Current (III)
-5
Ic/IB=30
-2
-1
Ta=100℃
-0.5
Ta=25℃
-0.2
-0.1
-0.05
-0.02
-0.01
-2m
Ta= -25℃
-5m-0.01-0.02-0.05 -0.1-0.2-0.5 -1 -2 -5 -10
Collector Current : Ic(A)
Collector-emitter Saturation Voltage
vs.Collector Current (V)
-5
Ic/IB=50
Ta= -25℃
-2
Ta=25℃
-1
Ta=100℃
-0.5
-0.2
-0.1
-0.05
-0.02
-0.01
-2m
-5m-0.01-0.02-0.05 -0.1-0.2-0.5 -1 -2 -5 -10
Collector Current : Ic(A)
1000
500
200
Collector Output Capacitance
vs.Collector-Base Voltage
Ta=25℃
f =1MHz
IE=0A
100
50
20
10
-0.1 -0.2 -0.5 -1 -2 -5 -10 -20 -50
Collector to Base Voltage:VCB (V)
4 of 5
QW-R209-021.B
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