BC807(Old_V) 查看數據表（PDF） - Unisonic Technologies

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BC807
(Rev.:Old_V)

PNP EPITAXIAL SILICON TRANSISTOR

Unisonic Technologies 

UTC BC807/BC808 PNP EPITAXIAL SILICON TRANSISTOR

SWITCHING AND AMPLIFIER

APPLICATIONS

FEATURES

*Suitable for AF-Driver stages and low power output

stages

*Complement to BC817 / BC818

2

1

3

SOT-23

1: EMITTER 2: BASE 3: COLLECTOR

ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise noted)

PARAMETER

SYMBOL

VALUE

Collector-Emitter Voltage

VCES

BC807

-50

BC808

-30

Collector-Emitter Voltage

VCE0

BC807

-45

BC808

-25

Emitter-Base Voltage

VEBO

-5

Collector Current (DC)

Ic

-800

Collector Dissipation

Pc

-310

Junction Temperature

Tj

150

Storage Temperature

Tstg

-65 to +150

UNIT

V

V

V

V

V

mA

mW

°C

°C

ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise noted)

PARAMETER

SYMBOL TEST CONDITIONS

MIN

Collector-Emitter Breakdown Voltage BVCEO Ic=-10mA, IB=0

BC807

-45

BC808

-25

Collector-Emitter Breakdown Voltage BVCES IC=-0.1mA, VBE=0

BC807

-50

BC808

-30

Emitter-Base Breakdown Voltage

BVEBO IE=-0.1mA, Ic=0

-5

Collector Cut-off Current

ICES VCE=-25V, VBE=0

Emitter Cut-off Current

IEBO VEB=-4V, Ic=0

TYP

MAX UNIT

V

V

V

V

V

-100 nA

-100 nA

UTC UNISONIC TECHNOLOGIES CO. LTD 1

QW-R206-026,A

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