BC807L-X-AL3-R 查看數據表（PDF） - Unisonic Technologies

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BC807L-X-AL3-R

PNP SILICON TRANSISTOR

Unisonic Technologies 

BC807/BC808

PNP SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Emitter Voltage

BC807

BC808

VCES

-50

-30

V

V

Collector-Emitter Voltage

BC807

BC808

VCEO

-45

-25

V

V

Emitter-Base Voltage

VEBO

-5

V

Collector Current (DC)

IC

-800

mA

Collector Dissipation

PC

310

mW

Junction Temperature

TJ

+150

°C

Storage Temperature

TSTG

-65 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

BC807

-45

V

Collector-Emitter Breakdown Voltage

BC808

BVCEO IC=-10mA, IB=0

-25

V

BC807

-50

V

Collector-Emitter Breakdown Voltage

BC808

BVCES IC=-0.1mA, VBE=0

-30

V

Emitter-Base Breakdown Voltage

BVEBO IE=-0.1mA, IC=0

-5

V

Collector Cut-OFF Current

ICES VCE=-25V, VBE=0

-100 nA

Emitter Cut-OFF Current

IEBO VEB=-4V, IC=0

-100 nA

DC Current Gain

hFE1 IC=-100mA, VCE=-1V

hFE2 IC=-300mA, VCE=-1V

100

630

60

Collector-Emitter Saturation Voltage

VCE(SAT) IC=-500mA, IB=-50mA

-0.7 V

Base-Emitter ON Voltage

VBE(ON) IC=-300mA, VCE=-1V

-1.2 V

Current Gain Bandwidth Product

fT VCE=-5V, IC=-10mA, f=50MHz

100

MHz

Output Capacitance

Cob VCB=-10V, f=1MHz

12 pF

„ CLASSIFICATION OF hFE

RANK

hFE1

hFE2

16

100-250

60-

25

160-400

100-

40

250-630

170-

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R206-026,D

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