BC807/BC808
TYPICAL CHARACTERISTICS
PNP SILICON TRANSISTOR
1000
100
DC Current Gain
VCE=-2.0V
PULSE
VCE=-1.0V
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
-10
IC=10IB
PULSE
VCE(SAT)
-1
10
1
-0.1
-1
-10 -100 -1000
Collector Current, IC(mA)
-0.1
VBE(SAT)
-0.01
-0.1
-1
-10 -100 -1000
Collector Current, IC(mA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-026,D