BC856S ... BC859S
BC856S ... BC859S
PNP
Surface Mount General Purpose Si-Epi-Planar Double-Transistors
Si-Epi-Planar Universal-Doppeltransistoren für die Oberflächenmontage
Version 2006-08-01
2±0.1
2 x 0.65
654
0.9±0.1
Type
Code
123
2.4
Dimensions - Maße [mm]
6 = C1 5 = B2 4 = E2
1 = E1 2 = B1 3 = C2
Power dissipation
Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
PNP
300 mW
SOT-363
0.01 g
Maximum ratings (TA = 25°C)
per transistor – pro Transistor
Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open
Collector-Base-voltage – Kollektor-Basis-Spannung E open
Emitter-Base-voltage – Emitter-Basis-Spannung
C open
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Peak Collector current – Kollektor-Spitzenstrom
Peak Base current – Basis-Spitzenstrom
Peak Emitter current – Emitter-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
- VCBO
- VCEO
- VEB0
Ptot
- IC
- ICM
- IBM
IEM
Tj
TS
Grenzwerte (TA = 25°C)
BC856S
BC857S
BC858S
BC859S
65 V
45 V
30 V
80 V
50 V
30 V
5V
300 mW 1)
100 mA
200 mA
200 mA
200 mA
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
per transistor – pro Transistor
DC current gain – Kollektor-Basis-Stromverhältnis
- VCE = 5 V, - IC = 10 µA
- VCE = 5 V, - IC = 2 mA
h-Parameters at/bei - VCE = 5 V, - IC = 2 mA, f = 1 kHz
Small signal current gain – Kleinsignal-Stromverstärkung
Input impedance – Eingangs-Impedanz
Output admittance – Ausgangs-Leitwert
Reverser voltage transfer ratio – Spannungsrückwirkung
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
hFE
–
90 ... 270
–
hFE
110
–
800
hfe
–
220 ... 600
–
hie
1.6 kΩ
–
15 kΩ
hoe
18 µS
–
110 µS
hre
–
1.5 ... 3*10-4
–
1 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
© Diotec Semiconductor AG
http://www.diotec.com/
1