BC857S 查看數據表（PDF） - Diotec Semiconductor Germany

零件编号

产品描述 (功能)

生产厂家

BC857S

Surface Mount General Purpose Si-Epi-Planar Double-Transistors

Diotec Semiconductor Germany  

BC856S ... BC859S

Characteristics (Tj = 25°C)

per transistor – pro Transistor

Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2)

- IC = 10 mA, - IB = 0.5 mA

- IC = 100 mA, - IB = 5 mA

Base-Emitter saturation voltage – Basis-Sättigungsspannung 2)

- VCEsat

- VCEsat

- IC = 10 mA, - IB = 0.5 mA

- IC = 100 mA, - IB = 5 mA

Base-Emitter-voltage – Basis-Emitter-Spannung 2)

- VBEsat

- VBEsat

- VCE = 5 V, - IC = 2 mA

- VCE = 5 V, - IC = 10 mA

- VBE

- VBE

Collector-Base cutoff current – Kollektor-Basis-Reststrom

- VCB = 30 V, (E open)

- VCE = 30 V, Tj = 125°C, (E open)

- ICB0

- ICB0

Emitter-Base cutoff current

- VEB = 5 V, (C open)

- IEB0

Gain-Bandwidth Product – Transitfrequenz

- VCE = 5 V, - IC = 10 mA, f = 100 MHz

fT

Collector-Base Capacitance – Kollektor-Basis-Kapazität

- VCB = 10 V, IE =ie = 0, f = 1 MHz

CCBO

Emitter-Base Capacitance – Emitter-Basis-Kapazität

- VEB = 0.5 V, IC = ic = 0, f = 1 MHz

CEB0

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

RthA

Recommended complementary NPN transistors

Empfohlene komplementäre NPN-Transistoren

Pinning – Anschlussbelegung

Kennwerte (Tj = 25°C)

Min.

Typ.

Max.

–

90 mV 250 mV

–

200 mV 600 mV

–

700 mV

–

–

900 mV

–

600 mV 650 mV 750 mV

–

–

820 mV

–

–

15 nA

–

–

5 µA

–

–

100 nA

100 MHz

–

–

–

–

6 pF

–

10 pF

–

< 420 K/W 1)

BC846S ... BC849S

654

T1: E1 = 1, C1 = 6, B1 = 2

T2: E2 = 4, C2 = 3, B2 = 5

T1

T2

1

2

3

2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

1 Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss

2

http://www.diotec.com/

© Diotec Semiconductor AG

Share Link: