BDW58 查看數據表（PDF） - Inchange Semiconductor

零件编号

产品描述 (功能)

生产厂家

BDW58

Silicon PNP Power Transistors

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistors

DESCRIPTION

·Collector–Emitter Sustaining Voltage-

: VCEO(SUS)= -45V- BDW56

= -60V- BDW58

= -80V- BDW60

·Complement to Type BDW55/57/59

APPLICATIONS

·Designed for use in professional equipment such as

telecommunication and etc.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

VCBO

Collector-Base

Voltage

BDW56

BDW58

BDW60

-45

-60

-100

VCER

Collector-Emitter

Voltage RBE= 1kΩ

BDW56

BDW58

BDW60

-45

-60

-100

VCEO

Collector-Emitter

Voltage

BDW56

-45

BDW58

-60

BDW60

-80

VEBO

Emitter-Base Voltage

-5

IC

Collector Current-Continuous

-1

ICM

Collector Current-Peak

-1.5

Collector Power Dissipation

PC

@ TC=25℃

8

TJ

Junction Temperature

175

Tstg

Storage Temperature Range

-65~175

UNIT

V

V

V

V

A

A

W

℃

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c

Rth j-a

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

MAX UNIT

10 ℃/W

100 ℃/W

isc Product Specification

BDW56/58/60

isc Website：www.iscsemi.cn

Share Link: