BSP62,115 查看數據表（PDF） - NXP Semiconductors.
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BSP62,115 Datasheet PDF : 7 Pages
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NXP Semiconductors
PNP Darlington transistors
Product data sheet
BSP60; BSP61; BSP62
FEATURES
• High current (max. 0.5 A)
• Low voltage (max. 80 V)
• Integrated diode and resistor.
APPLICATIONS
• Industrial switching applications such as:
– Print hammer
– Solenoid
– Relay and lamp drivers.
PINNING
PIN
1
2, 4
3
base
collector
emitter
DESCRIPTION
4
2, 4
1
DESCRIPTION
PNP Darlington transistor in a SOT223 plastic package.
NPN complements: BSP50, BSP51 and BSP52.
1
2
3
Top view
MAM266
3
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VCBO
VCES
VEBO
IC
ICM
IB
Ptot
Tstg
Tj
Tamb
PARAMETER
collector-base voltage
BSP60
BSP61
BSP62
collector-emitter voltage
BSP60
BSP61
BSP62
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
VBE = 0
open collector
Tamb ≤ 25 °C; note 1
MIN.
MAX.
UNIT
−
−60
V
−
−80
V
−
−90
V
−
−45
V
−
−60
V
−
−80
V
−
−5
V
−
−1
A
−
−2
A
−
−100
mA
−
1.25
W
−65
+150
°C
−
150
°C
−65
+150
°C
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for the SOT223 in the General Part of associated
Handbook”.
2001 May 31
2
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