BSS119E6327 查看數據表（PDF） - Infineon Technologies

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BSS119E6327

SIPMOS® Small-Signal-Transistor

Infineon Technologies 

Thermal Characteristics

Parameter

Rev. 1.0

Characteristics

Thermal resistance, junction - ambient

at minimal footprint

BSS119

Symbol

Values

Unit

min. typ. max.

RthJS

-

- 350 K/W

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

Static Characteristics

Drain-source breakdown voltage

VGS=0, ID=250µA

Gate threshold voltage, VGS = VDS

ID=50µA

Zero gate voltage drain current

VDS=100V, VGS=0, Tj=25°C

VDS=100V, VGS=0, Tj=150°C

Gate-source leakage current

VGS=20V, VDS=0

Drain-source on-state resistance

VGS=4.5V, ID=0.13 A

Drain-source on-state resistance

V(BR)DSS 100

-

-V

VGS(th)

1.3

1.8

2.3

IDSS

IGSS

µA

- 0.05 0.1

-

0.5

5

-

10 100 nA

RDS(on)

-

4.9 10 Ω

RDS(on)

-

3.4

6

VGS=10V, ID=0.17A

Page 2

2002-12-10

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