BTA201 查看數據表（PDF） - NXP Semiconductors.
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BTA201 Datasheet PDF : 12 Pages
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NXP Semiconductors
BTA201 series B, E and ER
1 A Three-quadrant triacs high commutation
7. Dynamic characteristics
Table 6. Dynamic characteristics
Symbol Parameter
Conditions
dVD/dt
dIcom/dt
tgt
rate of rise of
off-state voltage
rate of change of
commutating
current
gate-controlled
turn-on time
VDM = 67 % VDRM(max);
Tj = 125 °C; exponential
waveform; gate open
circuit
VDM = 400 V; Tj = 125 °C;
dVcom/dt = 20 V/µs; gate
open circuit
VDM = 400 V; Tj = 125 °C;
dVcom/dt = 10 V/µs; gate
open circuit
ITM = 20 A;
VD = VDRM(max);
IG = 0.1 A;
dIG/dt = 5 A/µs
BTA201-600B
BTA201-800B
Min Typ Max
1000 -
-
BTA201-600E
BTA201-800E
BTA201-800ER
Min Typ Max
600 -
-
Unit
V/µs
12
-
-
16
-
-
-
2
-
2.5 -
-
3.5 -
-
-
2
-
A/ms
A/ms
µs
1.6
VGT
VGT(25°C)
1.2
0.8
001aab101
3
IGT
IGT(25°C)
2
(1)
(2)
(3)
1
003aaa959
0.4
−50
0
50
100
150
Tj (°C)
Fig 7. Normalized gate trigger voltage as a function
of junction temperature
0
−50
0
(3)
(2)
(1)
50
100
150
Tj (°C)
(1) T2− G−
(2) T2+ G−
(3) T2+ G+
Fig 8. Normalized gate trigger current as a function
of junction temperature
BTA201_SER_B_E_ER_4
Product data sheet
Rev. 04 — 4 February 2008
© NXP B.V. 2008. All rights reserved.
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