BUL770 查看數據表（PDF） - Bourns, Inc
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BUL770 Datasheet PDF : 6 Pages
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BUL770
NPN SILICON POWER TRANSISTOR
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
L770CFB
10
1·0
0·1
TC = 25°C
tp = 10 µs
tp = 1 ms
tp = 10 ms
DC Operation
0·01
1·0
10
100
VCE - Collector-Emitter Voltage - V
Figure 9.
1000
MAXIMUM REVERSE-BIAS
SAFE OPERATING AREA
8
L770CRB
IB(on) = IC / 5
VBE(off) = -5 V
TC = 25°C
6
4
2
0
0 100 200 300 400 500 600 700 800
VCE - Collector-Emitter Voltage - V
Figure 10.
PRODUCT INFORMATION
JULY 1991 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
5
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