BUZ30A(1999) 查看數據表（PDF） - Infineon Technologies
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BUZ30A Datasheet PDF : 8 Pages
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BUZ 30A
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 30A
VDS
200 V
ID
21 A
RDS(on)
0.13 Ω
Maximum Ratings
Parameter
Continuous drain current
TC = 26 ˚C
Pulsed drain current
TC = 25 ˚C
Avalanche current,limited by Tjmax
Avalanche energy,periodic limited by Tjmax
Avalanche energy, single pulse
ID = 21 A, VDD = 50 V, RGS = 25 Ω
L = 1.53 mH, Tj = 25 ˚C
Gate source voltage
Power dissipation
TC = 25 ˚C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Package
TO-220 AB
Symbol
ID
IDpuls
IAR
EAR
EAS
VGS
Ptot
Tj
Tstg
RthJC
RthJA
Ordering Code
C67078-S1303-A3
Values
Unit
A
21
84
21
12
mJ
450
± 20
V
W
125
-55 ... + 150 ˚C
-55 ... + 150
≤1
K/W
75
E
55 / 150 / 56
Data Sheet
1
06.99
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