FCX1051A 查看數據表（PDF） - TY Semiconductor

零件编号

产品描述 (功能)

生产厂家

FCX1051A

NPN Silicon Power Switching Transistor

TY Semiconductor 

SSMMDD TTyyppee

Electrical Characteristics Ta = 25

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage *

Emitter-base breakdown voltage

Collector Cut-Off Current

Collector Emitter Cut-Off Current

Emitter Cut-Off Current

Collector-emitter saturation voltage *

Base-emitter saturation voltage *

Base-emitter ON voltage *

Static Forward Current Transfer Ratio*

Transitional frequency

Output capacitance

Turn-on time

Turn-off time

* Pulse test: tp = 300 ìs; d

0.02.

Marking

Marking

051

Symbol

Testconditons

V(BR)CBO IC=100ìA

V(BR)CEO IC=10mA

V(BR)EBO IE=100ìA

ICBO VCB=120V

ICES VCE=120V

IEBO VEB=4V

IC=0.2A, IB=10mA

IC=1A, IB=10mA

VCE(sat) IC=2A, IB=20mA

IC=3A, IB=40mA

IC=5A, IB=100mA

VBE(sat) IC=3A, IB=40mA

VBE(on) IC=3A, VCE=2V

hFE

fT

Cobo

t(on)

t(off)

IC=10mA, VCE=2V

IC=1A,VCE=2V

IC=3A,VCE=2V

IC=5A,VCE=2V

IC=10A,VCE=2V

IC=50mA, VCE=10V f=100MHz

VCB=10V, f=1MHz

IC=3A, VCC=10V

IB1=IB2=30mA

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Product specification

FCX1051A

Min Typ Max Unit

150

V

40

V

5

V

0.3 10 nA

0.3 10 nA

0.3 10 nA

17 25

85 120

140 180 mV

170 250

250 340

880 1000 mV

840 950 mV

290 440

270 450 1200

270 360 -

130 220 -

40 55

155

MHz

27 40 pF

220

ns

540

ns

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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