FMMT449 查看數據表（PDF） - Shenzhen Jin Yu Semiconductor Co., Ltd.

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FMMT449

TRANSISTOR (NPN)

Shenzhen Jin Yu Semiconductor Co., Ltd.  

FMMT449

TRANSISTOR (NPN)

FEATURES

 Low Equivalent On-Resistance

SOT–23

MARKING: 449

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

Parameter

Value

VCBO Collector-Base Voltage

50

VCEO Collector-Emitter Voltage

30

VEBO Emitter-Base Voltage

5

IC

Collector Current

1

PC

Collector Power Dissipation

200

RΘJA Thermal Resistance From Junction To Ambient

625

Tj

Junction Temperature

Tstg

Storage Temperature

150

-55～+150

Unit

V

V

V

A

mW

℃/W

℃

℃

1. BASE

2. EMITTER

3. COLLECTOR

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max Unit

Collector-base breakdown voltage

V(BR)CBO IC=1mA, IE=0

50

V

Collector-emitter breakdown voltage

V(BR)CEO IC=10mA, IB=0

30

V

Emitter-base breakdown voltage

V(BR)EBO IE=100µA, IC=0

5

V

Collector cut-off current

ICBO

VCB=40V, IE=0

0.1

µA

Emitter cut-off current

IEBO

VEB=4V, IC=0

0.1

µA

hFE(1) * VCE=2V, IC=50mA

70

DC current gain

hFE(2) * VCE=2V, IC=500mA

100

300

hFE(3) * VCE=2V, IC=1A

80

hFE(4) * VCE=2V, IC=2A

40

Collector-emitter saturation voltage

VCE(sat)1*

VCE(sat)2*

IC=1A, IB=100mA

IC=2A, IB=200mA

0.5

V

1

V

Base-emitter saturation voltage

VBE(sat)* IC=1A, IB=100mA

1.25

V

Base-emitter voltage

VBE*

VCE=2V, IC=1A

1

V

Transition frequency

VCE=10V,IC=50mA,

fT

150

f=100MHz

MHz

Collector output capacitance

Cob

VCB=10V, IE=0, f=1MHz

15

pF

*Pulse test

１　

JinYu

semiconductor

www.htsemi.com

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