ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
2.0
Tc = 25°C
Pulse Test
1.6
1.2
0.8
ID = 15A
10A
0.4
5A
0
0
2
4
6
8
10
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
40
Tc = 25°C
VDS = 10V
Pulse Test
32
24
16
8
0
0
2
4
6
8
10
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
2
Tch = 25°C
104
f = 1MHZ
7
5
VGS = 0V
3
2
103
7
5
Ciss
3
2
Coss
102
7
5
Crss
3
2
3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Nch POWER MOSFET
FS10ASJ-03
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
100 Tc = 25°C
Pulse Test
VGS = 4V
80
60
10V
40
20
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
102
7
VDS = 5V
Pulse Test
5
4
3
2
TC = 25°C 75°C
101
7
125°C
5
4
3
2
100100 2 3 4 5 7 101 2 3 4 5 7 102
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
102
7
5
4
td(off)
3
2
tf
101
7
5
4
3
2
100
100
tr
td(on)
Tch = 25°C
VDD = 15V
VGS = 10V
RGEN = RGS = 50Ω
2 3 4 5 7 101 2 3 4 5 7 102
DRAIN CURRENT ID (A)
Feb.1999