FS20UMA-5A 查看數據表（PDF） - Renesas Electronics
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FS20UMA-5A Datasheet PDF : 7 Pages
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GATE-SOURCE VOLTAGE
VS. GATE CHARGE
(TYPICAL)
20
16
VDS = 50V
100V
12
150V
8
4
TCh = 25°C
ID = 20A
0
0
40 80 120 160 200
GATE CHARGE Qg (nC)
MITSUBISHI Nch POWER MOSFET
FS20UMA-5A
HIGH-SPEED SWITCHING USE
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
40
32
TC =
25°C
24
75°C
125°C
16
8
VGS = 0V
Pulse Test
0
0 0.8 1.6 2.4 3.2 4.0
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
101
VGS = 10V
7 ID = 10A
5 Pulse Test
3
2
100
7
5
3
2
10–1
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
5.0
VDS = 10V
ID = 1mA
4.0
3.0
2.0
1.0
0
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
VGS = 0V
ID = 1mA
1.2
1.0
0.8
0.6
0.4
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
101
7
5
3
2
D = 1.0
100
7 = 0.5
5
3 = 0.2
2
10–1
7
5
3
2
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
= 0.1
= 0.05
= 0.02
= 0.01
Single Pulse
PDM
tw
T
D= tw
T
10–210–42 3 5 710–32 3 5 710–22 3 5 710–12 3 5 7 100 2 3 5 7 101 2 3 5 7 102
PULSE WIDTH tw (s)
Sep. 2001
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