HY57V641620HG-I 查看數據表（PDF） - Hynix Semiconductor

零件编号

产品描述 (功能)

生产厂家

HY57V641620HG-I

4 Banks x 1M x 16Bit Synchronous DRAM

Hynix Semiconductor 

ABSOLUTE MAXIMUM RATINGS

Parameter

Ambient Temperature

Storage Temperature

Voltage on Any Pin relative to VSS

Voltage on VDD relative to VSS

Short Circuit Output Current

Power Dissipation

Soldering Temperature ⋅ Time

Symbol

TA

TSTG

VIN, VOUT

VDD, VDDQ

IOS

PD

TSOLDER

Rating

-40 ~ 85

-55 ~ 125

-1.0 ~ 4.6

-1.0 ~ 4.6

50

1

260 ⋅ 10

Note : Operation at above absolute maximum rating can adversely affect device reliability

DC OPERATING CONDITION (TA= -40 to 85°C)

Parameter

Power Supply Voltage

Input High Voltage

Input Low Voltage

Symbol

VDD, VDDQ

VIH

VIL

Min

3.0

2.0

VSSQ - 2.0

Typ.

3.3

3.0

0

Note :

1.All voltages are referenced to VSS = 0V

2.VDD(min) of HY57V641620HG(L)T-5I/55I/6I is 3.135V

3.VIH (max) is acceptable 5.6V AC pulse width with ≤3ns of duration

4.VIL (min) is acceptable -2.0V AC pulse width with ≤3ns of duration

Max

3.6

VDDQ + 2.0

0.8

AC OPERATING CONDITION (TA= -40 to 85°C, VDD=3.3 ± 0.3VNote2, VSS=0V)

Parameter

AC Input High / Low Level Voltage

Input Timing Measurement Reference Level Voltage

Input Rise / Fall Time

Output Timing Measurement Reference Level

Output Load Capacitance for Access Time Measurement

Symbol

VIH / VIL

Vtrip

tR / tF

Voutref

CL

Value

2.4/0.4

1.4

1

1.4

50

Note :

1. Output load to measure access time is equivalent to two TTL gates and one capacitor (50pF)

For details, refer to AC/DC output circuit

2.VDD(min) of HY57V641620HG(L)T-5I/55I/6I is 3.135V

HY57V641620HG

Unit

°C

°C

V

V

mA

W

°C ⋅ Sec

Unit

V

V

V

Note

1,2

1,3

1,4

Unit

V

V

ns

V

pF

Note

1

Rev. 1.0/Jan. 02

4

Share Link: