IMT17L-AG6-R 查看數據表（PDF） - Unisonic Technologies

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IMT17L-AG6-R

GENERAL PURPOSE DUAL TRANSISTOR

Unisonic Technologies 

IMT17

The following characteristics apply to both Tr1 and Tr2.

ABSOLUATE MAXIUM RATINGS* (Ta = 25℃)

PARAMETER

SYMBOL

Collector Base Voltage

VCBO

Collector Emitter Voltage

VCEO

Emitter Base Voltage

VEBO

Collector Current

Ic

Power Dissipation

PD

Junction Temperature

TJ

Storage Temperature

TSTG

*200mW per element must not be exceeded.

DUAL TRANSISTOR

RATINGS

-60

-50

-5

500

300

+150

-40 ~ +150

UNIT

V

V

V

mA

mW*

°C

°C

ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified.)

PARAMETER

Collector Base Breakdown Voltage

Collector Emitter Breakdown Voltage

Emitter Base Breakdown Voltage

Collector Emitter Saturation Voltage

Collector Cutoff Current

Emitter Cutoff Current

Output Capacitance

DC Current Transfer Ratio

Transition Frequency

*Measured using pulse current.

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

BVCBO Ic = -100µA

-60

V

BVCEO Ic = -1mA

-50

V

BVEBO IE = -100µA

-5

V

VCE(sat) Ic = -500mA, IB = - 50mA

-0.6 V

ICBO VCB = -30V

-0.1 µA

IEBO

VEB = -4V

-0.1 µA

Cob VCE = -10V, IE=0A, f =1MHz

7

pF

hFE VCE = - 3V, Ic = -100mA

120

390

fT

VCE = -10V, IE =20mA, f =100MHz

200

MHz

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2

QW-R215-006,A

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