IPS04N03LA 查看數據表（PDF） - Infineon Technologies
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IPS04N03LA Datasheet PDF : 12 Pages
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13 Avalanche characteristics
I AS=f(t AV); R GS=25 Ω
parameter: Tj(start)
100
150 °C
IPD04N03LA G IPF04N03LA G
IPS04N03LA G IPU04N03LA G
14 Typ. gate charge
V GS=f(Q gate); I D=25 A pulsed
parameter: V DD
12
10
25 °C
100 °C
8
15 V
5V
20 V
10
6
4
2
1
1
10
100
t AV [µs]
15 Drain-source breakdown voltage
V BR(DSS)=f(T j); I D=1 mA
0
1000
0
20
40
60
80
Q gate [nC]
16 Gate charge waveforms
29
V GS
28
27
26
25
24
V g s(th)
23
22
21
20
-60
-20
20
60 100 140 180
T j [°C]
Q g(th)
Q gs
Rev. 1.97
page 7
Qg
Q sw
Q gd
Q gate
2006-05-17
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